Saujan's manuscript titled "Direct Observation of Transient Surface Species during Ge Nanowire Growth and their Influence on Growth Stability" has been accepted for publication in the Journal of the American Chemical Society. This work uses in situ infrared spectroscopy during the growth of semiconductor nanowires to show that surface adsorbates present on the sidewall are required for stable growth. These findings suggest new opportunities to control nanowire growth and improve structure.